Microstructural control of charge transport in organic blend thin-film transistors

Hunter, Simon; Chen, Jihua; Anthopoulos, Thomas D.

doi:10.1002/adfm.201401087

Title: Microstructural control of charge transport in organic blend thin-film transistors

Journal Article · Thu Jul 17 00:00:00 EDT 2014 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201401087· OSTI ID:1265395

Hunter, Simon ^[1]; Chen, Jihua ^[2]; Anthopoulos, Thomas D. ^[1]

Imperial College, London (United Kingdom)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

In this paper, the charge-transport processes in organic p-channel transistors based on the small-molecule 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT), the polymer poly(triarylamine)(PTAA) and blends thereof are investigated. In the case of blend films, lateral conductive atomic force microscopy in combination with energy filtered transmission electron microscopy are used to study the evolution of charge transport as a function of blends composition, allowing direct correlation of the film's elemental composition and morphology with hole transport. Low-temperature transport measurements reveal that optimized blend devices exhibit lower temperature dependence of hole mobility than pristine PTAA devices while also providing a narrower bandgap trap distribution than pristine diF-TES ADT devices. These combined effects increase the mean hole mobility in optimized blends to 2.4 cm²/Vs; double the value measured for best diF-TES ADT-only devices. The bandgap trap distribution in transistors based on different diF-TES ADT:PTAA blend ratios are compared and the act of blending these semiconductors is seen to reduce the trap distribution width yet increase the average trap energy compared to pristine diF-TES ADT-based devices. In conclusion, our measurements suggest that an average trap energy of <75 meV and a trap distribution of <100 meV is needed to achieve optimum hole mobility in transistors based on diF-TES ADT:PTAA blends.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265395

Journal Information:: Advanced Functional Materials, Vol. 24, Issue 38; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 53 works

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Title: Microstructural control of charge transport in organic blend thin-film transistors

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