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Electronic Structure of In2O3 from Resonant X-ray Emission Spectroscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3070524· OSTI ID:980184

The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2O3.

Research Organization:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Organization:
Doe - Office Of Science
DOE Contract Number:
AC02-98CH10886
OSTI ID:
980184
Report Number(s):
BNL--93102-2010-JA
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 94; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English