Controlling Nickel Sillicide Phase by Si Implantation Damage

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Nuclear Instruments and Methods B

OSTI ID:980084

Guillard, M; Turcotte-Tremblay, P; Gaudet, S; Coia, C; Roorda, S; Desjardins, P; Lavoie, C; Schiettekatte, F

In the context of fabrication process of contacts in CMOS integrated circuits, we studied the effect of implantation-induced damage on the Ni silicide phase formation sequence. The device layers of Silicon-on-insulator samples were implanted with 30 or 60 keV Si ions at several fluences up to amorphization. Next, 10 or 30 nm Ni layers were deposited. The monitoring of annealing treatments was achieved with time-resolved X-ray diffraction (XRD) technique. Rutherford Backscattering Spectrometry and pole figure XRD were also used to characterize some intermediate phase formations. We show the existence of an implantation threshold (1 ions/nm{sup 2}) from where the silicidation behaviour changes significantly, the formation temperature of the disilicide namely shifting abruptly from 800 to 450 C. It is also found that the monosilicide formation onset temperature for the thinner Ni deposits increases linearly by about 30 C with the amount of damage.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 980084
• Report Number(s): BNL--93002-2010-JA
• Journal Information: Nuclear Instruments and Methods B, Journal Name: Nuclear Instruments and Methods B Journal Issue: 8-9 Vol. 267
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DAMAGE
DEPOSITS
EQUIPMENT
FABRICATION
INTEGRATED CIRCUITS
IONS
LAYERS
MONITORING
NICKEL
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICIDES
X-RAY DIFFRACTION
national synchrotron light source