Characterization of Si(100) homoepitaxy grown in the STM at low temperatures

Conference · Mon Dec 31 23:00:00 EST 2001

OSTI ID:976428

Grube, H ^[1]; Brown, G W ^[2]; Pomeroy, J M ^[3]; Hawley, M E ^[4]

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1. Holger
2. Geoffrey W.
3. Joshua M.
4. Marilyn E.

We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic surface roughness and defects We characterize films grown at different temperatures up to 500K in-situ by means of an effusion cell added to our UHVSTM. The development of novel architectures for future generation computers calls for high-quality homoepitaxial (WOO) grown at low temperature. Even though Si(100) can be grown crystalline up to a limited thickness: the microstructure reveals significant small-scale surface roughness and defects specific to low-temperature growth. Both can he detrimental to fabrication and operation of small-scale electronic devices.

• Research Organization: Los Alamos National Laboratory
• Sponsoring Organization: DOE
• OSTI ID: 976428
• Report Number(s): LA-UR-02-6953
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERS
DEFECTS
DIFFUSION
EPITAXY
FABRICATION
MICROSTRUCTURE
ROUGHNESS
THICKNESS