High dose Xe ion irradiation of yttria stabilized zirconia : influence of sputtering on implanted ion profile and retained damage /.

Conference · Mon Jan 01 04:00:00 EST 2001

OSTI ID:975780

Afanasyev, I V ^[1]; Sickafus, K ^[2]

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1. Ivan Viktorovich
2. Kurt E.

Fully-stabilized zirconia is known as a radiation resistant material. The objective of many experinients on zirconia has been to test the susceptibility of this material to amorphization. Because zirconia exhibits high radiation tolerance, this has made very high fluence ion irradiation experiments a necessity and so, additional iiradiation-inducetl effects such as surface sputtering become important. In this paper, we present results from 340 keV Xe' irradiations of yttria-stabilized zirconia (YSZ) to fluences ranging froiri 1.10' to 1.5.1OZ1 ions/m2. No iunorphization of YSZ was observed after irradiation to even the highest ion fluences. To assess sputtering effects at high fluence, an analytical model was developed, using ion range and damage distribulions calculated using Monte Carlo simulations for ion-solid interactions. Analysis results and experimental data revealed that at high fluences, the implanted ion and damago distribution profiles are significantly modified by sputtering.

• Research Organization: Los Alamos National Laboratory
• Sponsoring Organization: DOE
• OSTI ID: 975780
• Report Number(s): LA-UR-01-5576
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISTRIBUTION
IRRADIATION
RADIATION EFFECTS
RADIATIONS
SPUTTERING
TOLERANCE
XENON