Dielectric spectroscopy of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films on hastelloy substrates with and without LaNiO{sub 3} buffer layers.
Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films were deposited by sol-gel synthesis on Hastelloy substrates with and without a LaNiO{sub 3} buffer. The dielectric properties were measured as a function of temperature and frequency to study the cause of dielectric degradation in PLZT films directly on hastelloy substrates. These measurements indicated an increased charge carrier activity in films without a buffer layer. We propose that a region of the film closer to the substrate surface is more oxygen deficient than the bulk and is responsible for the degradation in properties rather than the presence of a low parasitic secondary-phase interfacial layer such as NiO{sub x}.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 974026
- Report Number(s):
- ANL/ES/JA-65743
- Journal Information:
- J. Appl. Phys., Journal Name: J. Appl. Phys. Journal Issue: 2010 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- ENGLISH
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