Dielectric spectroscopy of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub0.48}O{sub 3} films on hastealloy substrates with and without LaNiO{sub 3} buffer layers.

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3291127· OSTI ID:1039137

Narayanan, M; Ma, B; Balachandran, U; Li, W ^[1]

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1. Energy Systems

Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films were deposited by sol-gel synthesis on Hastelloy substrates with and without a LaNiO{sub 3} buffer. The dielectric properties were measured as a function of temperature and frequency to study the cause of dielectric degradation in PLZT films directly on hastelloy substrates. These measurements indicated an increased charge carrier activity in films without a buffer layer. We propose that a region of the film closer to the substrate surface is more oxygen deficient than the bulk and is responsible for the degradation in properties rather than the presence of a low parasitic secondary-phase interfacial layer such as NiO{sub x}.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: EE
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 1039137
• Report Number(s): ANL/ES/JA-66580; JAPIAU; TRN: US201209%%199
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 2; ISSN 0021-8979
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CHARGE CARRIERS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
HASTELLOYS
OXYGEN
SPECTROSCOPY
SUBSTRATES
SYNTHESIS