Lithographic performance evaluation of a contaminated EUV mask after cleaning
The effect of surface contamination and subsequent mask surface cleaning on the lithographic performance of a EUV mask is investigated. SEMATECH's Berkeley micro-field exposure tool (MET) printed 40 nm and 50 nm line and space (L/S) patterns are evaluated to compare the performance of a contaminated and cleaned mask to an uncontaminated mask. Since the two EUV masks have distinct absorber architectures, optical imaging models and aerial image calculations were completed to determine any expected differences in performance. Measured and calculated Bossung curves, process windows, and exposure latitudes for the two sets of L/S patterns are compared to determine how the contamination and cleaning impacts the lithographic performance of EUV masks. The observed differences in mask performance are shown to be insignificant, indicating that the cleaning process did not appreciably affect mask performance.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 973695
- Report Number(s):
- LBNL-2649E
- Journal Information:
- JVST B, Journal Name: JVST B
- Country of Publication:
- United States
- Language:
- English
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