In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.
Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 972191
- Report Number(s):
- ANL/MSD/JA-65838; APPLAB; TRN: US1001976
- Journal Information:
- Appl. Phys. Lett., Vol. 96, Issue 2010; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
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