GaAs nanowires by metal-organic chemical vapor deposition : a chemical kinetic model of tapering.
Journal Article
·
· Proposed for publication in the Journal of Crystal Growth.
OSTI ID:966616
No abstract prepared.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 966616
- Report Number(s):
- SAND2008-4537J
- Journal Information:
- Proposed for publication in the Journal of Crystal Growth., Journal Name: Proposed for publication in the Journal of Crystal Growth.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Kinetic model for metal-organic chemical vapor deposition of GaAs with organometallic-arsenic precursors
The Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions.
Journal Article
·
· Journal of Physical Chemistry; (USA)
·
OSTI ID:6709849
The Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition
Conference
·
Thu Jul 13 00:00:00 EDT 2000
·
OSTI ID:760773
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions.
Journal Article
·
Sun Oct 01 00:00:00 EDT 2006
· Appl. Phys. Lett.
·
OSTI ID:935629