Kinetic model for metal-organic chemical vapor deposition of GaAs with organometallic-arsenic precursors
- Univ. of Minnesota, Minneapolis (USA)
Models for the chemical kinetics of the growth of GaAs by using triethylgallium and trimethylgallium with trimethylarsene, triethylarsene, tert-butylarsine, and phenylarsine are described. Emphasis is placed on results obtained with a metal-organic chemical vapor deposition reactor equipped with a recording microbalance for in situ growth rate measurements. Rate data show that the growth with these precursors is dominated by adduct-related parasitic gas-phase reactions at high temperatures and by surface reactions at lower temperatures. A model is proposed for the competition between deposition reactions and the parasitic gas-phase reactions. The kinetic model works well for all combinations of precursors except for triethylgallium and trimethylarsene, where extensive gallium droplet formation is observed at low temperatures. The predicted rate constants reflect the trends expected from the chemical structure of the arsenic precursors and their tendency to form adduct compounds. In addition to the chemical investigations, the electrical properties of GaAs grown with triethylgallium and tert-butylarsine are examined by using the Hall effect. This source combination, which has not been used previously, gives promising results for the growth of GaAs.
- OSTI ID:
- 6709849
- Journal Information:
- Journal of Physical Chemistry; (USA), Journal Name: Journal of Physical Chemistry; (USA) Vol. 2:1; ISSN 0022-3654; ISSN JPCHA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DATA ANALYSIS
DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GERMANIUM ARSENIDES
GERMANIUM COMPOUNDS
HALL EFFECT
INFORMATION
KINETICS
MATERIALS
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
MEASURING METHODS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SURFACE COATING