Tertiary butylarsine grown GaAs solar cell

Journal Article · Sun Feb 12 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100883· OSTI ID:6497791

Sundaram, V S; Arau, B A; Avery, J E; Bailey, A L; Girard, G R; Hager, H E; Thompson, A G; Fraas, L M

High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open-circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.

• Research Organization: High Technology Center, Boeing Electronics, P. O. Box 24969, MS 9Z-80, Seattle, Washington 98124--6269
• OSTI ID: 6497791
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING