Effects of total dose irradiation on single-event upset hardness.
- CEA/DIF, Bruyeres-le-Chatel, France
- TRIUMF, Vancouver, BC
The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst case hardness assurance test conditions for space environments. SRAMs from six different vendors were characterized for single-event upset (SEU) hardness at proton energies from 20 to 500 MeV and at temperatures of 25 and 80 C after total dose irradiating the SRAMs with either protons, Co-60 gamma rays, or low-energy x-rays. It is shown that total dose irradiation and the bias configuration during total dose irradiation and SEU characterization can substantially affect SEU hardness for some SRAMs. For one SRAM, the bias configuration made more than two orders of magnitude difference in SEU cross section at the highest total dose level examined. In addition, it is shown that increasing the temperature during SEU characterization can also increase the effect of total dose on SEU hardness. As a result, worst-case SEU hardness assurance test conditions are the maximum total dose and temperature of the system environment, and the minimum operating voltage of the SRAM. In contrast to previous works, our results using selective area x-ray irradiations show that the source of the effect of total dose on SEU hardness is radiation-induced leakage currents in the memory cells. The increase in SEU cross section with total dose appears to be consistent with radiation-induced currents originating in the memory cells affecting the output bias levels of bias level shift circuitry used to control the voltage levels to the memory cells and/or due to the lowering of the noise margin of individual memory cells caused by radiation-induced leakage currents.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 966605
- Report Number(s):
- SAND2005-2212C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single event upset in irradiated 16k CMOS SRAMs
Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance