Near-surface structure of the in-situ nitrided silicon carbide
Conference
·
OSTI ID:96542
- Shanghai Institute of Ceramics (China)
Near-surface structures of the in-situ nitrided SiC were investigated by TEM. It was found that a dense nitrided layer was formed on the SiC surface. The nitrided layer has a composition gradient consisting the outmost {beta}-Si{sub 3}N{sub 4} layer, the medium SiC/Si{sub 3}N{sub 4} layer, and the matrix SiC layer. Furthermore, fiber-like carbon grains were induced in the nitrided layer during the nitridation. It is the surface layer that contributes to the increase in bending strength of the materials at room temperature which in turn attributes to the formation of a dense layer.
- OSTI ID:
- 96542
- Report Number(s):
- CONF-940416--
- Country of Publication:
- United States
- Language:
- English
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