Microstructural and compositional investigations of surface-nitrided silicon carbide ceramics
Journal Article
·
· Materials Research Bulletin
OSTI ID:82652
- Chinese Academy of Sciences, Shanghai (China). Shanghai Inst. of Ceramics
Hot isostatically pressed SiC ceramics were nitrided at a N{sub 2}-pressure of 200 MPa and a temperature of 1,850 C for 1 h. The microstructures were investigated by scanning electron microscopy and transmission electron microscopy. A continuous nitride layer was observed in the near-surface region, where Si{sub 3}N{sub 4} was formed between SiC grains. The nitride-layer thickness was determined to be approximately 14 {micro}m by proton elastic backscattering spectrometry. The depth distribution of elements, Si, C and N was quantitatively evaluated by Auger electron spectroscopy, which showed that the N concentration was nearly maintained at the same fraction in the nitride layer.
- OSTI ID:
- 82652
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 6 Vol. 30; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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