In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures
- University of Delaware
The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of coevaporated Cu(InGa)Se2 thin films and on the performance of the resulting solar cell devices have been characterized. Films were deposited at substrate temperatures of 150°C, 300°C and 400°C. Films were also deposited at these temperatures and then annealed in-situ at 550°C for 10 minutes. In as -deposited films without annealing, additional XRD reflections that may be due to a polytypic modification of the chalcopyrite phase were observed. Films deposited at 150°C were Se-rich. Post-deposition annealing caused microstructural changes in all films and improved the resulting solar cells. Only films deposited at 400°C, however, yielded high-efficiency devices after post-deposition annealing that were equivalent to devices made from films grown at 550°C. Films originally deposited at 300°C yielded devices after post-deposition annealing with VOC close to that of devices made from films grown at 550°C, despite smaller grain size.
- Research Organization:
- University of Delaware, Newark, DE
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy (EE); USDOE EERE Office of Solar Energy Technology (EE-2A)
- DOE Contract Number:
- FG36-08GO18019
- OSTI ID:
- 963896
- Report Number(s):
- DOE/GO/18019-3
- Country of Publication:
- United States
- Language:
- English
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