Effect of reduced deposition temperature, time, and thickness on Cu(InGa)Se{sub 2} films and devices
- Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion
This paper addresses the ability to reduce process costs for multisource evaporation of Cu(InGa)Se{sub 2} by reducing the deposition temperature and film thickness and increasing the deposition rate. Substrate temperature (T{sub ss}) is varied from 600 {ge} T{sub ss} {ge} 350 C using fixed elemental fluxes. The grain size decreases over the entire range but Na incorporation from the soda lime glass substrate doesn`t change. Solar cell efficiency decreases slowly for 550 {ge} T{sub ss} {ge} 400 C. At T{sub ss} below 400 C there is a change in composition attributed to a change in the re-evaporation of In and Ga species in the growing film. Device performance is shown to be unaffected by reducing the film thickness from 2.5 to less than 1.5 {micro}m. Finally, a kinetic reaction model is presented for the growth of CuInSe{sub 2} by multisource elemental evaporation which provides quantitative predictions of the time to grow CuInSe{sub 2} films as a function of substrate temperature and delivery rate.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 302499
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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