Dielectric properties and energy storage capability of antiferroelectric Pb{sub 0.92}La{sub 0.08}Ti{sub 0.05}O{sub 3} film-on-foil capacitors.
Antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (E{sub AF} {approx} 270 kV/cm) and that for the reverse phase transition (E{sub FA} {approx} 230 kV/cm) were measured at room temperature on samples with PLZT films of {approx}1-{micro}m thickness. Relative permittivity of {approx}560 and dielectric loss of <0.05 were measured near zero DC bias field. Hysteresis loop analysis showed that energy densities of {approx}53 and 37 J/cm3 can be stored and recovered from the film-on-foil capacitors at 25 and 150 C, respectively. Highly accelerated life tests were conducted. The projected mean time to failure is >5000 h when the capacitors are operated at room temperature with an applied field of {approx}300 kV/cm.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 963637
- Report Number(s):
- ANL/ES/JA-64215
- Journal Information:
- J. Mater. Res., Journal Name: J. Mater. Res. Journal Issue: 9 ; 2009 Vol. 24; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Fabrication of antiferroelectric PLZT films on metal foils.
Fabrication of antiferroelectric PLZT films on metal foils