Leakage currrent characteristics and dielectric breakdown of antiferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} film capacitors grown on metal foils.
We have grown crack-free antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E{sub AF} = 260 kV cm{sup -1}, and the reverse phase transition field, E{sub FA} = 220 kV cm{sup -1}, were measured at room temperature on a {approx}1.15 {micro}m thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were {approx}530 and {approx}740, respectively, with dielectric loss <0.05 at room temperature. P-E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 {micro}m thick AFE PLZT film-on-foil capacitor was 5 x 10{sup -9} A cm{sup -2} at room temperature under 87 kV cm{sup -1} applied field. The breakdown behavior of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm{sup -1} was applied to a 1.15 {micro}m thick AFE PLZT film-on-foil capacitor.
- Research Organization:
- Argonne National Laboratory (ANL)
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 939333
- Report Number(s):
- ANL/ES/JA-61835
- Journal Information:
- J. Phys. D, Journal Name: J. Phys. D Journal Issue: 2008 Vol. 41; ISSN 0022-3727; ISSN JPAPBE
- Country of Publication:
- United States
- Language:
- ENGLISH
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