Electrical contacts to ultrananocrystalline diamond.

Journal Article · Mon Sep 08 04:00:00 EDT 2003 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.1609043· OSTI ID:961396

Gerbi, J E; Auciello, O; Birrell, J; Gruen, D M; Carlisle, J A; Alphenaar, B W

The contact behavior of various metals on n-type nitrogen-doped ultrananocrystalline diamond (UNCD) thin films has been investigated. The influences of the following parameters on the current-voltage characteristics of the contacts are presented: (1) electronegativity and work function of various metals, (2) an oxidizing acid surface cleaning step, and (3) oxide formation at the film/contact interface. Near-ideal ohmic contacts are formed in every case, while Schottky barrier contacts prove more elusive. These results counter most work discussed to date on thin diamond films, and are discussed in the context of the unique grain-boundary conductivity mechanism of the nitrogen-doped UNCD.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; NSF
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 961396
• Report Number(s): ANL/MSD/JA-47372
• Journal Information: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 10 ; Sep. 8, 2003 Vol. 83; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
DIAMONDS
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRONEGATIVITY
FILMS
GRAIN BOUNDARIES
METALS
NITROGEN
OXIDES
SURFACE CLEANING
THIN FILMS
WORK FUNCTIONS