Single-Crystalline B12As2 on m-plane (1100) 15R-SiC
Single crystal, heteroepitaxial growth of icosahedral B12As2 (IBA, a boride semiconductor) on m-plane 15R-SiC is demonstrated. Previous studies of IBA on other substrates, i.e., (111)Si and (0001)6H-SiC, produced polycrystalline and twinned epilayers. In contrast, single-crystalline and untwinned IBA was achieved on m-plane 15R-SiC. Synchrotron white beam x-ray topography, Raman spectroscopy, and high resolution transmission electron microscopy confirm the high quality of the films. High quality growth is shown to be mediated by ordered nucleation of IBA on (474) substrate facets. This work demonstrates that m-plane 15R-SiC is a good substrate choice to grow high-quality untwinned IBA epilayers for future device applications.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 959633
- Report Number(s):
- BNL--82619-2009-JA
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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