A theory of low-field, high-carrier-density breakdown in semiconductors.
- Texas Tech University, Lubbock TX
Collective impact ionization has been used to explain lock-on, an optically-triggered electrical breakdown occurring in some photoconductive semiconductor switches (PCSS's). Lock-on is observed in GaAs and InP but not in Si or GaP. Here, a rate equation implementation of collective impact ionization is discussed, and it leads to new insights both about intrinsic electrical breakdown in insulating materials in general and about lock-on specifically. In this approach, lock-on and electrical breakdown are steady state processes controlled by competition between carrier generation and recombination. This leads to theoretical definitions for both the lock-on field and the breakdown field. Our results show that lock-on is a carrier-density dependent form of electrical breakdown which exists in principle in all semiconductors. Results for GaAs, InP, Si, and GaP are discussed.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 959100
- Report Number(s):
- SAND2004-3677C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theory of optically-triggered electrical breakdown of semiconductors.
A Collective Impact Ionization Theory of Lock-On