Theory of optically-triggered electrical breakdown of semiconductors.

Conference · Tue Jul 01 04:00:00 EDT 2003

OSTI ID:1004369

Myles, Charles W ^[1]; Kambour, Kenneth E ^[1]; Hjalmarson, Harold Paul

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1. Texas Tech University, Lubbock, TX

In this paper, we describe a rate equation approach that leads to new insights about electrical breakdown in insulating and semiconducting materials. In this approach, the competition between carrier generation by impact ionization and carrier recombination by Auger and defect recombination leads to steady state solutions for the carrier generation rate, and it is the accessibility of these steady state solutions, for a given electric field, that governs whether breakdown does or does not occur. This approach leads to theoretical definitions for not only the intrinsic breakdown field but also other characteristic quantities. Results obtained for GaAs using a carrier distribution function calculated by both a Maxwellian approximation and an ensemble Monte Carlo method will be discussed.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1004369
• Report Number(s): SAND2003-3113C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APPROXIMATIONS
BREAKDOWN
DEFECTS
DIELECTRIC MATERIALS
DISTRIBUTION FUNCTIONS
ELECTRIC FIELDS
ELECTRICAL FAULTS
ELECTRICAL INSULATION
IONIZATION
MONTE CARLO METHOD
RECOMBINATION