On the features of dislocation-obstacle interactions in thin films: direct comparison between in situ experiments and large scale computer modeling.
- ORNL
Large-scale atomistic modelling has demonstrated that the dynamic interactions of dislocations in thin films have a number of remarkable features. A particular example is the interaction between a screw dislocation and a stacking fault tetrahedron (SFT) in Cu, which can be directly compared with in situ observations of quenched or irradiated fcc metals. If the specimen is thin, the dislocation velocity is slow, and the temperature is high enough, a segment of the original SFT can be transported towards the surface via a double cross-slip mechanism and fast glide of an edge dislocation segment formed during the interaction. The mechanisms observed in the simulations provide an explanation for the results of in situ straining experiments and the differences between bulk and thin film experiments.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 958749
- Journal Information:
- Philosophical Magazine Letters, Journal Name: Philosophical Magazine Letters Journal Issue: 8 Vol. 86; ISSN 0950-0839; ISSN PMLEEG
- Country of Publication:
- United States
- Language:
- English
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