Atomic-scale details of dislocation - stacking fault tetrahedra interaction.
- ORNL
- Genie Physique et Mecanique des Materiaux
- University of Liverpool
Stacking fault tetrahedra (SFTs) are formed during irradiation of fcc. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. The key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 930709
- Journal Information:
- Materials Science and Engineering A, Journal Name: Materials Science and Engineering A Vol. 400-401
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dislocation-stacking fault tetrahedron interaction: what can we learn from atomic scale modelling.
The collapse of stacking fault tetrahedra by interactions with gliding dislocations.