Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

Conference ·
DOI:https://doi.org/10.1063/1.57998· OSTI ID:9543
; ; ; ;  [1];  [2]
  1. National Renewable Energy Laboratory
  2. Southern University and A&M College, LA

We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

Research Organization:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-83CH10093
OSTI ID:
9543
Report Number(s):
NREL/CP-520-25782; ON: DE00009543
Country of Publication:
United States
Language:
English

Similar Records

Induced recrystallization of CdTe thin films deposited by close-spaced sublimation
Journal Article · Sun Feb 28 23:00:00 EST 1999 · AIP Conference Proceedings · OSTI ID:357200

Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation
Conference · Sun Oct 25 23:00:00 EST 1998 · OSTI ID:6606

Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films
Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A · OSTI ID:359796