Junction Formation in CuInSe{sub 2} Based Thin Film Devices
The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 9540
- Report Number(s):
- NREL/CP-520-25712; ON: DE00009540
- Country of Publication:
- United States
- Language:
- English
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