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Molten-Salt-Based Growth of Group III Nitrides

Patent ·
OSTI ID:953743

A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM
Sponsoring Organization:
United States Department of Energy
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,435,297
Application Number:
11/102,357
OSTI ID:
953743
Country of Publication:
United States
Language:
English

References (12)

Electrochemical Synthesis of Ceramic Materials. 5. An Electrochemical Method Suitable for the Preparation of Nine Metal Nitrides journal January 1997
Electrochemical formation of iron nitride film in a molten LiClKClLi3N system journal June 2000
GaN single crystal growth from a Na-Ga melt journal January 2000
Liquid phase electroepitaxy of III–V semiconductors journal January 1995
High pressure growth of bulk GaN from solutions in gallium journal July 2001
Electrochemical growth of crystals from electrolyte solutions journal July 1976
Preparation and characterizations of bulk GaN crystals journal January 2004
Electrochemical reduction of nitrogen gas in a molten chloride system journal July 1998
Electrochemical surface nitriding of titanium in molten salt system journal June 1994
Crystal growth of gallium nitride in supercritical ammonia journal January 2001
Dissolution and formation of nuclear materials in molten media journal May 2001
Electrochemical Properties of Li[sub 3]N Dissolved in Molten LiCl at 900 K journal January 2001

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