Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
- Radiation Monitoring Devices, Inc., Watertown, MA (United States)
- Boston Univ., MA (United States). Molecular Beam Epitaxy Lab.
We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-instilating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-MBE). Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the order of 20ns for our detectors, corresponding to a bandwidth of 25Mhz. The spectral response showed a sharp long-wavelength cutoff at 365nm, and remained constant in the 200nm to 365nm range. The response of the detectors to low-energy x-rays was measured and found to be linear for x-rays with energies ranging from 60kVp to 90kVp.
- Research Organization:
- Radiation Monitoring Devices, Inc., Watertown, MA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-94ER81843
- OSTI ID:
- 95356
- Report Number(s):
- CONF-950793--7; ON: DE95015149
- Country of Publication:
- United States
- Language:
- English
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