Shallow donors in GaN.
- Samsung Advanced Institute of Technology, Suwon, Korea
- SFA, Inc., Largo, MD
- Naval Research Laboratory, Washington, DC
High-resolution, variable temperature PL experiments were performed in the spectral region associated with recombination processes involving the ground and excited states of the neutral donor bound excitons. High-resolution infrared measurements in combination with high-sensitive SIMS unambiguously identified Si and O shallow donors and yield their ground state binding energies. These binding energies are in excellent agreement with values obtained by the analysis of the two-electron-satellite PL spectra considering the participation of ground and excited state donor bound excitons. This work clarifies conflicting aspects existing in donor identification and the binding energies of the impurities and excitons.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 953316
- Report Number(s):
- SAND2004-2933J
- Journal Information:
- Proposed for publication in Phys. Stat. Sol. (b)., Journal Name: Proposed for publication in Phys. Stat. Sol. (b).
- Country of Publication:
- United States
- Language:
- English
Similar Records
Carbon related donor bound exciton transitions in ZnO nanowires