Synthesis And Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays
Journal Article
·
· Nano Lett. 8:4081,2008
OSTI ID:953163
Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 953163
- Report Number(s):
- SLAC-REPRINT-2009-121; TRN: US0902678
- Journal Information:
- Nano Lett. 8:4081,2008, Vol. 8, Issue 11
- Country of Publication:
- United States
- Language:
- English
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