Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes.

Journal Article · Tue Nov 30 23:00:00 EST 2004 · Proposed for publication in Nano Letters.

OSTI ID:952129

Kavanagh, K L ^[1]; Leonard, Francois Leonard ^[2]; Hsu, Julia W. P.; Li, Wenjie ^[1]; Talin, Albert Alec ^[2]; Faleev, Sergey V ^[2]; Matzke, Carolyn M

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1. Simon Fraser University, Burnaby, BC, Canada
2. Sandia National Laboratories, Livermore, CA

We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 952129
• Report Number(s): SAND2004-6670J
• Journal Information: Proposed for publication in Nano Letters., Journal Name: Proposed for publication in Nano Letters.
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
ELECTRON EMISSION
GALLIUM ARSENIDES
GOLD
INTERFACES
MICROSCOPY
RESOLUTION
SEMICONDUCTOR DIODES
THIOLS