Channeling Studies of CeO₂ and Ce₁-xZrxO₂ Films on Yttria-Stabilized ZrO₂(111)
Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO₂ and Ce₀.₇Zr₀.₃O₂ films on yttria-stabilized ZrO₂(111) substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce₀.₇Zr₀.₃O₂ film.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 951882
- Report Number(s):
- PNNL-SA--34038; KP1504020
- Country of Publication:
- United States
- Language:
- English
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