Epitaxial growth and characterization of Ce{sub 1{minus}x}Zr{sub x}O{sub 2} thin films

Journal Article · Sat May 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.581671· OSTI ID:348154

Gao, Y; Herman, G S; Thevuthasan, S; Peden, C H; Chambers, S A ^[1]

---

1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

Epitaxial films of mixed Ce{sub 1{minus}x}Zr{sub x}O{sub 2}(001) oxides with x{le}0.3 have been grown on SrTiO{sub 3}(001) by oxygen-plasma-assisted molecular beam epitaxy. The film growth at 600 {degree}C is predominantly nucleation and growth of three-dimensional islands. The films become much smoother after rapid thermal annealing at 700 {degree}C for 30 s in the oxygen plasma. High-energy ion channeling reveals that Zr atoms substitutionally incorporate at cation sites in the CeO{sub 2} lattice for all doping levels, leading to Ce{sub 1{minus}x}Zr{sub x}O{sub 2} solid solutions. Analysis of Zr 3d and Ce 3d core-level binding energies shows that the oxidation state of both Zr and Ce is +4. Lattice distortion induced by incorporation of Zr in the CeO{sub 2} lattice becomes prevalent for high doping levels and surface roughen accordingly. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 348154
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CERIUM COMPOUNDS
CERIUM OXIDES
DOPED MATERIALS
ION CHANNELING
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
NUCLEATION
SOLID SOLUTIONS
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS
ZIRCONIUM ADDITIONS
ZIRCONIUM COMPOUNDS