Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme.
- University of Illinois, Urbana, Illinois
- Gwangju Institute of Science and Technology, Gwangju, South Korea
Ohmic contacts on p-type GaN utilizing Pd/Ir/Au metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2 x 10{sup -5} {Omega} cm{sup 2} were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed Pd/Ir/Au contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 951750
- Report Number(s):
- SAND2005-1948J; TRN: US200913%%54
- Journal Information:
- Proposed for publication in J. Vacuum Science and Technology-B., Journal Name: Proposed for publication in J. Vacuum Science and Technology-B.
- Country of Publication:
- United States
- Language:
- English
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