High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Journal Article · Mon Oct 04 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1805199· OSTI ID:20634316

Chen, G -T; Pan, C -C; Fang, C -S; Huang, T -C; Chyi, J -I; Chang, M -N; Huang, S -B; Hsu, J -T ^[1]

---

1. Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan (China)

Thermal stability, optical reflectivity, and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity (<2x10{sup -2} {omega} cm{sup 2}) and reflectivity (>76%) after long-term annealing at 150 deg. C in nitrogen ambient. According to the results of the secondary ion mass spectroscopy study, it is suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment.

• OSTI ID: 20634316
• Journal Information: Applied Physics Letters, Vol. 85, Issue 14; Other Information: DOI: 10.1063/1.1805199; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ANNEALING
GALLIUM NITRIDES
GOLD
ION MICROPROBE ANALYSIS
LAYERS
LIGHT EMITTING DIODES
MASS SPECTROSCOPY
NICKEL
NITROGEN
PALLADIUM
REFLECTIVITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0400-1000 K
TITANIUM
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA