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Nonlinear optical dynamics and Eu{sup 3+} spectral holeburning in strontium barium niobate thin film grown by pulsed laser deposition.

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.1425072· OSTI ID:949268
Optical quality Sr{sub x}Ba{sub 1-x}Nb{sub 2}O{sub 6} (SBN) thin films, both undoped and Eu{sup 3 +} -doped, of thickness less than 0.5 {mu}m have been successfully grown on fused quartz substrates using a pulsed laser deposition technique. Optical properties of these films were characterized in high-resolution spectroscopic experiments in time and frequency domains. For undoped SBN thin films, broadband emission in the UV region extending to the visible was observed following excitation at 355 nm. This emission is attributed to exciton luminescence of the SBN film. Nonlinear optical response in the picosecond regime and the third-order nonlinear susceptibility, chi(3), were studied using degenerate four-wave-mixing methods. In transverse alignment, chi(3) is enhanced by two orders of magnitude in comparison with its bulk counterpart. A thermal annealing process, monitored via changes in spectral properties of Eu3 + , was employed to convert the as-grown amorphous film into a polycrystalline film. High-resolution spectroscopic measurements in the frequency domain were conducted on a 200-nm-thick film of Eu{sup 3 +}-doped SBN. Our spectroscopic results suggest that Eu{sup 3 +} ions may substitute for Nb, thereby occupying a normally six-fold coordinated lattice site. At liquid helium temperature, spectral holes in the {sup 7}F{sub 0}-{sup 5}D{sub 0} optical transition were burned in the thermally annealed films. Typical observed hole widths were 70-100 MHz and hole depths were as large as 30% of the peak fluorescence intensity.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC; OUS; NASA
DOE Contract Number:
AC02-06CH11357
OSTI ID:
949268
Report Number(s):
ANL/CHM/JA-39371
Journal Information:
J. Appl. Phys., Journal Name: J. Appl. Phys. Journal Issue: 1 ; Jan. 1, 2002 Vol. 91; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
ENGLISH

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