Growth strains and creep in thermally grown alumina : oxide growth mechanisms.
In situ measurements of growth strains and creep relaxation in {alpha}-Al{sub 2}O{sub 3} films, isothermally grown on {beta}-NiAl alloys at 1100 C, are reported and analyzed. Samples containing the reactive element Zr, and Zr-free samples, are examined. For Zr-free samples, steady state growth strains are compressive, whereas the growth strains are tensile when the reactive element (RE) is added to the alloy. This behavior is attributed to the counterflow of oxygen and aluminum interstitials, and to simultaneous counterflow of oxygen and aluminum vacancies, all moving through the grain boundaries. Cross diffusing oxygen and aluminum interstitials may merge and combine within the film, forming new oxide along grain boundary walls, a mechanism that leads to an in-plane compressive stress. Cross diffusing oxygen and aluminum vacancies will also merge and combine within the film; in this case material is removed from grain boundary walls, a mechanism that leads to an in-plane tensile stress. When no RE is present, the interstitial mechanism dominates and the resultant stress is compressive. Consistent with the 'dynamic segregation model', the RE slows the outdiffusion of Al interstitials permitting the tensile mechanism to dominate. This interpretation invokes the unconventional view that oxygen and aluminum interstitials and vacancies, created in and driven by the strong chemical gradient, all participate meaningfully in the scale growth process. Grain boundary diffusion measurements were obtained from low stress creep data, interpreted using the Coble model of grain boundary diffusion. Reported diffusion measurements of oxygen through grain boundaries of {alpha}-Al{sub 2}O{sub 3}, which are known to be inconsistent with oxide scale growth, are critically examined. A simple picture, a 'balanced defect model', emerges that is consistent with the dynamic segregation model, observed growth stresses and their dependence on the presence of a reactive element, sequential oxidation experiments, and our best knowledge about grain boundary diffusion coefficients.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 947534
- Report Number(s):
- ANL/MSD/JA-62047; JAPIAU; TRN: US200905%%5
- Journal Information:
- J. Appl. Phys., Vol. 104, Issue 2008; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- ENGLISH
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