Performance of MBE grown CdTe photoconductor arrays for hard x-ray detection

Conference · Sat Jul 01 04:00:00 EDT 1995

OSTI ID:94637

Yoo, S S; Montano, P A ^[1]; Rodricks, B; Faurie, J P; Sivanathan, S ^[2]

---

1. Illinois Univ., Chicago, IL (United States)
2. Argonne National Lab., IL (United States)

Photoconductor linear array detectors for hard x-ray photon detection were fabricated using Molecular Beam Epitaxially (MBD) grown (111)B CdTe layers on (100) orientation Si substrates. Since the Si substrates used for the MBE growth are semiconducting, the CdTe epitaxial layers were removed from the substrates using chemical etching of Si and mounted on insulating ceramic substrates. Linear array detectors were then fabricated on the resulting CdTe layers. The response current uniformity of 64 element photoconductor array was measured at 300 K and 230 K. The ohmic contact to the highly resistive CdTe is excellent to provide the linear response to the x-ray photon counts. The response current was linearly increased in the energies from 7 to 19 KeV. Stability of the detectors are very satisfactory and they were tested for over an extended period of time without any noticeable degradations. The performance of the photoconductor was greatly improved when the detector was cooled by a thermoelectric cooler. Due to its reduced noise at these temperatures, the dynamic range of the detector response increases to nearly four decades at 230 K.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 94637
• Report Number(s): ANL/XFD/CP--87075; CONF-950874--1; ON: DE95015714
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CDTE SEMICONDUCTOR DETECTORS
FABRICATION
HARD X RADIATION
PERFORMANCE TESTING
X-RAY DETECTION