Synchrotron x-ray photoconductor detector arrays made on MBE grown CdTe
- Univ. of Illinois, Chicago, IL (United States)
- Argonne National Lab., IL (United States)
We have been fabricating x-ray photoconductor linear array detectors using molecular beam epitaxially (MBE) grown (111)B undoped CdTe layers on (100) Si substrates. A novel technique was developed to remove the Si and to mount the fragile MBE grown CdTe layers onto insulating ceramic substrates. 256 channel linear photoconductor array devices were fabricated on the resulting CdTe layers. The resistivity of MBE (111)B CdTe was high (> 10{sup 8} {Omega}cm) enough to utilize the material for low energy (8 to 25 keV) x-ray detectors. The stability of the detectors are satisfactory, and they were tested at room temperature routinely for over a year. The performance of the photoconductor was greatly improved when the detector was cooled to 230K. Due to its reduced dark current at low temperatures, the dynamic range of the detector response increased to nearly four decades at 230K. 29 refs., 8 figs.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 420811
- Report Number(s):
- CONF-9510388--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 25; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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