Semimetal/semiconductor composites for optoelectronic applications
Book
·
OSTI ID:94445
- Purdue Univ., West Lafayette, IN (United States)
A new kind of semiconductor composite material containing a dispersion of metallic particles has properties common to high-quality single crystals. These materials are arsenides, such as GaAs, AlGaAs, and InGaAs containing As clusters. The material is grown by molecular beam epitaxy (MBE) with typical group III and As fluxes, but with a substrate temperature in the range of 200 C to 300 C. After growth, the material is strained because of the excess As in the crystal; the amount of excess As can be as high as 1.5--2%. The lattice strain is significantly reduce by annealing, accompanied by a precipitation of the excess As. These composite materials exhibit interesting and useful properties, including a large electro-optic effect, and a combination of properties that make it useful as a high-speed photoconductor.
- OSTI ID:
- 94445
- Report Number(s):
- CONF-940142--; ISBN 0-8194-1440-9
- Country of Publication:
- United States
- Language:
- English
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