Generation of Nitrogen Acceptors in ZnO using Pulse Thermal Processing

Journal Article · Tue Jan 01 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2911725· OSTI ID:943537

Xu, Jun ^[1]; Ott, Ronald D ^[1]; Sabau, Adrian S ^[1]; Pan, Zhengwei ^[1]; Xiu, Faxian ^[2]; Liu, Jilin ^[3]; Erie, Jean-Marie ^[3]; Norton, David P ^[1]

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1. ORNL
2. University of California, Riverside
3. University of Florida

Bipolar doping in wide bandgap semiconductors is difficult to achieve under equilibrium conditions because of the spontaneous formation of compensating defects and unfavorable energetics for dopant substitution. In this work, we explored the use of rapid pulse thermal processing for activating nitrogen dopants into acceptor states in ZnO. Low-temperature photoluminescence spectra revealed both acceptor-bound exciton (A{sup 0}X) and donor-acceptor pair emissions, which present direct evidence for acceptors generated after pulse thermal processing of nitrogen-doped ZnO. This work suggests that pulse thermal processing is potentially an effective method for p-type doping of ZnO.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Laboratory Directed Research and Development (LDRD) Program
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 943537
• Journal Information: Applied Physics Letters, Vol. 92, Issue 15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
DEFECTS
EXCITONS
NITROGEN
PHOTOLUMINESCENCE
PROCESSING
SPECTRA