Multiple bonding configurations for Te absorbed on the Ge(001) surface.

Journal Article · Wed Sep 15 00:00:00 EDT 1999 · Phys. Rev. B

DOI:https://doi.org/10.1103/PhysRevB.60.8704· OSTI ID:943059

Lyman, P F; Marasco, D L; Walko, D A; Bedzyk, M J

Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge(001) was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer (ML). At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group VI/Group IV adsorption was discovered. Te-Ge heterodimers were formed with an average valency of 5, allowing them to satisfy all surface dangling bonds. The results help explain the efficacy of Te as a surfactant in epitaxial growth of Ge/Si(001).

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: NSF; USDOE
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 943059
• Report Number(s): ANL/MSD/JA-37150
• Journal Information: Phys. Rev. B, Journal Name: Phys. Rev. B Journal Issue: 12 ; Sep. 15, 1999 Vol. 60; ISSN 1098-0121
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
BONDING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
EPITAXY
GERMANIUM
STANDING WAVES
SURFACES
SURFACTANTS
TELLURIUM