Multiple bonding configurations for Te adsorbed on the Ge(001) surface
- Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)
Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge(001) was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer (ML). At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group VI/Group IV adsorption was discovered. Te-Ge heterodimers were formed with an average valency of 5, allowing them to satisfy all surface dangling bonds. The results help explain the efficacy of Te as a surfactant in epitaxial growth of Ge/Si(001). {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 686554
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 12 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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