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Effects of moisture exposure on radiation-induced MOS device degradation and its implications for long-term aging.

Conference ·
OSTI ID:942197
 [1];  [2];  [1];  [1];  [1];  [1]; ; ; ; ;  [1]
  1. Vanderbilt University
  2. Lockheed Martin Space Systems
+ Show Author Affiliations

Large and unexpected radiation-induced voltage shifts have been observed for some MOS technologies exposed to moisture. The mechanisms for these large voltage shifts and their implications for long-term aging are discussed.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
942197
Report Number(s):
SAND2008-0772C
Country of Publication:
United States
Language:
English

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Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AGING
DAMAGE
ELECTRIC POTENTIAL
MOISTURE
MOS TRANSISTORS
RADIATION EFFECTS