Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

Journal Article · Tue Jan 01 04:00:00 EST 2008 · Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California

DOI:https://doi.org/10.1117/12.763494· OSTI ID:940608

Wei, S H; Dalpian, G M

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 940608
• Journal Information: Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California, Journal Name: Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California Vol. 6894
• Publisher: Bellingham, WA: SPIE - The International Society for Optical Engineering
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER DENSITY
ELECTRONS
FERROMAGNETISM
GALLIUM NITRIDES
KINETICS
MAGNETIC SEMICONDUCTORS
Materials Science and Semiconductors
PHYSICAL PROPERTIES
RECOMMENDATIONS
TRANSITION ELEMENTS