Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3157273· OSTI ID:1021218

Kan, E; Xiang, H; Yang, J; Whangbo, M H

Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1021218
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25, June 2009 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC FIELDS
ELECTRODES
FUNCTIONALS
MAGNETIC SEMICONDUCTORS
MAGNETISM
Materials Science and Semiconductors
TRANSITION ELEMENTS