Skip to main content

Ti/Al/Ti/Au and V/Al/V/Au contacts to Plasma-etched n-Al0.58Ga0.42N.

Journal Article · Fri Feb 01 04:00:00 EST 2008 · Proposed for publication in Journal of Electronic Materials.

OSTI ID:940533

Bogart, Katherine Huderle Andersen; Mohney, Suzanne E ^[1]; Koo, B H ^[2]; Miller, M A ^[1]

The Pennsylvania State University, University Park, PA
Changwon National University, Changwon, Gyeongnam 641-773, Korea

No abstract prepared.

Print

Research Organization:: Sandia National Laboratories

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 940533

Report Number(s):: SAND2008-0924J

Journal Information:: Proposed for publication in Journal of Electronic Materials., Journal Name: Proposed for publication in Journal of Electronic Materials.

Country of Publication:: United States

Language:: English

Similar Records

Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN

Journal Article · Mon Aug 27 00:00:00 EDT 2001 · Applied Physics Letters · OSTI ID:786993

Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN

Journal Article · Mon Aug 27 00:00:00 EDT 2001 · Applied Physics Letters · OSTI ID:787136

Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

Journal Article · Mon Aug 21 00:00:00 EDT 2006 · Applied Physics Letters · OSTI ID:20883181

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM BASE ALLOYS
ELECTRIC CONTACTS
ETCHING
GALLIUM ALLOYS
GOLD
TITANIUM
VANADIUM