Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.
- American Staff Augmentation Providers, LLC, Albuquerque, NM
Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 940518
- Report Number(s):
- SAND2008-5253
- Country of Publication:
- United States
- Language:
- English
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