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Title: Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.

Abstract

Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.

Authors:
; ;  [1]
  1. (American Staff Augmentation Providers, LLC, Albuquerque, NM)
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
940518
Report Number(s):
SAND2008-5253
TRN: US0807202
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; DIFFUSION; INTEGRATED CIRCUITS; IRRADIATION; NEUTRONS; SANDIA NATIONAL LABORATORIES; SENSITIVITY; SHUTDOWN; SIMULATION; TRANSISTORS; Electronic circuits.; Power transistors.; Transistors.; Sandia National Laboratories; Gamma Irradiation Facility

Citation Formats

DePriest, Kendall Russell, Kajder, Karen C., and Peters, Curtis D. Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.. United States: N. p., 2008. Web. doi:10.2172/940518.
DePriest, Kendall Russell, Kajder, Karen C., & Peters, Curtis D. Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.. United States. doi:10.2172/940518.
DePriest, Kendall Russell, Kajder, Karen C., and Peters, Curtis D. 2008. "Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.". United States. doi:10.2172/940518. https://www.osti.gov/servlets/purl/940518.
@article{osti_940518,
title = {Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.},
author = {DePriest, Kendall Russell and Kajder, Karen C. and Peters, Curtis D.},
abstractNote = {Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.},
doi = {10.2172/940518},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2008,
month = 8
}

Technical Report:

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