MOS-transistor radiation detectors and x-ray dose-enhancement effects
Sandia National Laboratory (SNL) CMOS IC dose detectors and 3N161 MOS Transistors were evaluated as pulsed x-radiation dosimeters and used as monitors to measure dose-enhancement effects. Measurements were made in the photon environments from the HydraMITE II, SPR III, MBS and PITHON radiation sources. The dosimetric evaluation data suggest that the 3N161 MOS transistors are useful dosimeters for measuring flash x-ray-induced doses in the oxide layers of modern metal-oxide-semiconductor (MOS) integrated circuits. However, dose-enhancement calculations indicate that Monte Carlo codes, using 1-D geometries and calculated source spectra, consistently overpredict measured dose-enhancement ratios by factors as large as two. 12 refs., 8 figs., 2 tabs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Ktech Corp., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5024584
- Report Number(s):
- SAND-85-1936C; CONF-8510165-1; ON: DE86001320
- Resource Relation:
- Conference: 6. JOWOG meeting, Aldermaston, England, 7 Oct 1985; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DOSEMETERS
PERFORMANCE TESTING
MOS TRANSISTORS
CHEMICAL RADIATION EFFECTS
ENERGY SPECTRA
INTEGRATED CIRCUITS
MONTE CARLO METHOD
ONE-DIMENSIONAL CALCULATIONS
SURFACE BARRIER TRANSISTORS
X RADIATION
CHEMISTRY
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
IONIZING RADIATIONS
MEASURING INSTRUMENTS
MICROELECTRONIC CIRCUITS
RADIATION CHEMISTRY
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SPECTRA
TESTING
TRANSISTORS
440102* - Radiation Instrumentation- Radiation Dosemeters